NTE4151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain to Source Breakdown Voltage :

-20V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

760mA

Transistor Element Material :

SILICON

Turn-Off Delay Time :

29 ns

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

156pF @ 5V

Width :

950μm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

800μm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Published :

2005

Element Configuration :

Single

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

6V

RoHS Status :

ROHS3 Compliant

Resistance :

260mOhm

Package / Case :

SC-89, SOT-490

Packaging :

Tape and Reel (TR)

Number of Pins :

3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Voltage - Rated DC :

-20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Pin Count :

3

Fall Time (Typ) :

8.2 ns

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±6V

Current Rating :

-760mA

Turn On Delay Time :

8 ns

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

313mW

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

313mW Tj

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

0.76A

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

760mA Tj

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

360m Ω @ 350mA, 4.5V

Radiation Hardening :

No

Rise Time :

8.2ns

Factory Lead Time :

8 Weeks

Length :

1.6764mm