NTBV75N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Terminal Form :

Gull wing

Factory Lead Time :

25 Weeks

Pin Count :

3

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0095Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

75A

Reference Standard :

AEC-Q101

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 37.5A, 10V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

844 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

225A

Number of Terminations :

2

Max Power Dissipation :

2.4W

Drain to Source Voltage (Vdss) :

60V

HTS Code :

8541.29.00.95

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Operating Temperature (Max) :

175°C