NTB082N65S3F
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- Mfr.Part #
- NTB082N65S3F
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 40A D2PAK
- Stock
- 8,689
- In Stock ：
- 8,689
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Series :
- SuperFET® III
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pbfree Code :
- yes
- Factory Lead Time :
- 12 Weeks
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 82m Ω @ 20A, 10V
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 650V
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3410pF @ 400V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 313W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- NTB082N65S3F
N-Channel Tape & Reel (TR) 82m Ω @ 20A, 10V ±30V 3410pF @ 400V 81nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB082N65S3F Description
The SUPERFET III MOSFET is a new high-voltage super-junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This cutting-edge technology is designed to reduce conduction loss, improve switching performance, and sustain high dv/dt rates. As a result, the SUPERFET III MOSFET is well suited to diverse power systems in terms of compactness and efficiency. The optimized reverse recovery performance of the SUPERFET III FRFET MOSFET's body diode can eliminate a component and improve system reliability.
NTB082N65S3F Features
-
700 V @ TJ = 150°C
-
Typ. RDS(on) = 70 m
-
100% Avalanche Tested
-
Ultra Low Gate Charge (Typ. Qg = 81 nC)
-
These Devices are Pb?Free and are RoHS Compliant
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
NTB082N65S3F Applications
-
EV Charger
-
UPS / Solar
-
Industrial Power Supplies
-
Telecom / Server Power Supplies
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