NSVMMBTA05LT1G
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- Mfr.Part #
- NSVMMBTA05LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 84,600
- In Stock ：
- 84,600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 225mW
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 250mV
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2007
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Power - Max :
- 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Frequency - Transition :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- NSVMMBTA05LT1G
NPN -55°C~150°C TJ 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVMMBTA05LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.During maximum operation, collector current can be as low as 500mA volts.
NSVMMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
NSVMMBTA05LT1G Applications
There are a lot of ON Semiconductor
NSVMMBTA05LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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