NSM6056MT1G
- Mfr.Part #
- NSM6056MT1G
- Manufacturer
- onsemi
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC74
- Stock
- 6,312
- In Stock :
- 6,312
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Turn Off Time-Max (toff) :
- 255ns
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Surface Mount :
- yes
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 250MHz
- Max Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 600mA
- Transition Frequency :
- 250MHz
- Pin Count :
- 6
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Polarity :
- NPN
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 35ns
- Transistor Type :
- NPN + Zener Diode (Isolated)
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 380mW
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 11 Weeks
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 6
- Collector Emitter Voltage (VCEO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- SC-74, SOT-457
- Datasheets
- NSM6056MT1G

NPN + Zener Diode (Isolated) -55°C~150°C TJ 1 Elements 6 Terminations SILICON SC-74, SOT-457 Tape & Reel (TR) Surface Mount
NSM6056MT1G Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 600mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
NSM6056MT1G Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
NSM6056MT1G Applications
There are a lot of ON Semiconductor
NSM6056MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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