NP82N03PUG-E1-AY
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- Mfr.Part #
- NP82N03PUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 82A TO263
- Stock
- 17,781
- In Stock ：
- 17,781
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 82A
- Operating Temperature :
- 175°C TJ
- Fall Time (Typ) :
- 15 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 9080pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Power Dissipation-Max :
- 1.8W Ta 143W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 30V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Turn On Delay Time :
- 39 ns
- Rise Time :
- 122ns
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 82A Tc
- Turn-Off Delay Time :
- 70 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 2.8m Ω @ 41A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Datasheets
- NP82N03PUG-E1-AY
N-Channel Tape & Reel (TR) 2.8m Ω @ 41A, 10V ±20V 9080pF @ 25V 160nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP82N03PUG-E1-AY Overview
The maximum input capacitance of this device is 9080pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 82A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 39 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
NP82N03PUG-E1-AY Features
a continuous drain current (ID) of 82A
the turn-off delay time is 70 ns
a 30V drain to source voltage (Vdss)
NP82N03PUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP82N03PUG-E1-AY applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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