NP74N04YUG-E1-AY
- Mfr.Part #
- NP74N04YUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-SMD, Flat Lead Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A 8HSON
- Stock
- 5,000
- In Stock :
- 5,000
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Turn On Delay Time :
- 26 ns
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Factory Lead Time :
- 26 Weeks
- Turn-Off Delay Time :
- 62 ns
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 37.5A, 10V
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5430pF @ 25V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 5
- Pin Count :
- 8
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Operating Temperature :
- 175°C TJ
- Package / Case :
- 8-SMD, Flat Lead Exposed Pad
- Published :
- 2010
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 75A
- Feedback Cap-Max (Crss) :
- 400 pF
- JESD-30 Code :
- R-PDSO-F5
- DS Breakdown Voltage-Min :
- 40V
- Rise Time :
- 10ns
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- Power Dissipation-Max :
- 1W Ta 120W Tc
- Fall Time (Typ) :
- 6 ns
- Datasheets
- NP74N04YUG-E1-AY

N-Channel Tape & Reel (TR) 5.5m Ω @ 37.5A, 10V ±20V 5430pF @ 25V 96nC @ 10V 40V 8-SMD, Flat Lead Exposed Pad
NP74N04YUG-E1-AY Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5430pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 26 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NP74N04YUG-E1-AY Features
a continuous drain current (ID) of 75A
the turn-off delay time is 62 ns
a 40V drain to source voltage (Vdss)
NP74N04YUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP74N04YUG-E1-AY applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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