NP48N055KLE-E1-AY

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Mfr.Part #
NP48N055KLE-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 48A TO263
Stock
21,229
In Stock :
21,229

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2007
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
9.3 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
2.5V @ 250μA
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Terminal Position :
Single
Factory Lead Time :
16 Weeks
Number of Terminations :
2
Transistor Element Material :
SILICON
Power Dissipation-Max :
1.8W Ta 85W Tc
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
55V
Rds On (Max) @ Id, Vgs :
17m Ω @ 24A, 10V
Turn-Off Delay Time :
54 ns
Continuous Drain Current (ID) :
48A
Number of Elements :
1
Rise Time :
11ns
HTS Code :
8541.29.00.95
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
55V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Operating Temperature :
175°C TJ
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
100 mJ
Pulsed Drain Current-Max (IDM) :
140A
Vgs (Max) :
±20V
Turn On Delay Time :
17 ns
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
Drain-source On Resistance-Max :
0.024Ohm
Number of Pins :
3
Datasheets
NP48N055KLE-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP48N055KLE-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:175°C TJ, Number of Pins:3, NP48N055KLE-E1-AY pinout, NP48N055KLE-E1-AY datasheet PDF, NP48N055KLE-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP48N055KLE-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) NP48N055KLE-E1-AY


N-Channel Tape & Reel (TR) 17m Ω @ 24A, 10V ±20V 3000pF @ 25V 60nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP48N055KLE-E1-AY Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 48A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 54 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 140A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NP48N055KLE-E1-AY Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 48A
the turn-off delay time is 54 ns
based on its rated peak drain current 140A.
a 55V drain to source voltage (Vdss)


NP48N055KLE-E1-AY Applications


There are a lot of Renesas Electronics America
NP48N055KLE-E1-AY applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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