NP33N06YDG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

Radiation Hardening :

No

Pin Count :

8

Transistor Element Material :

SILICON

Turn-Off Delay Time :

54 ns

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Turn On Delay Time :

16 ns

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

8-SMD, Flat Lead Exposed Pad

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Terminations :

5

Factory Lead Time :

16 Weeks

Drain-source On Resistance-Max :

0.02Ohm

Vgs (Max) :

±20V

ECCN Code :

EAR99

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Rise Time :

12ns

Operating Temperature :

175°C TJ

Continuous Drain Current (ID) :

33A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

220 pF

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

14m Ω @ 16.5A, 10V

Number of Pins :

8

Power Dissipation-Max :

1W Ta 97W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

6 ns

Case Connection :

DRAIN