NP22N055SHE-E1-AY
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- Mfr.Part #
- NP22N055SHE-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 22A TO252
- Stock
- 20,861
- In Stock ：
- 20,861
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 1.2W
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 16 Weeks
- Operating Temperature :
- 175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 55V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 6.6 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 11 ns
- Rise Time :
- 6ns
- Published :
- 2005
- Continuous Drain Current (ID) :
- 22A
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 11A, 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 25 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 890pF @ 25V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 1.2W Ta 45W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Datasheets
- NP22N055SHE-E1-AY
N-Channel Tape & Reel (TR) 39m Ω @ 11A, 10V ±20V 890pF @ 25V 18nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
NP22N055SHE-E1-AY Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 890pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP22N055SHE-E1-AY Features
a continuous drain current (ID) of 22A
the turn-off delay time is 25 ns
a 55V drain to source voltage (Vdss)
NP22N055SHE-E1-AY Applications
There are a lot of Renesas Electronics America
NP22N055SHE-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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