NP20P04SLG-E1-AY
- Mfr.Part #
- NP20P04SLG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 20A TO252
- Stock
- 2,781
- In Stock :
- 2,781
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 10A, 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 80 ns
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1650pF @ 10V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 60A
- Power Dissipation-Max :
- 1.2W Ta 38W Tc
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 160 ns
- Drain-source On Resistance-Max :
- 0.038Ohm
- Continuous Drain Current (ID) :
- 20A
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Temperature :
- 175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 40V
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 40V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Turn On Delay Time :
- 8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 6ns
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Terminal Form :
- Gull wing
- Published :
- 1997
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Power Dissipation :
- 1.2W
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 16 Weeks
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NP20P04SLG-E1-AY

P-Channel Tape & Reel (TR) 25m Ω @ 10A, 10V ±20V 1650pF @ 10V 34nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
NP20P04SLG-E1-AY Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 40 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1650pF @ 10V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 160 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 60A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NP20P04SLG-E1-AY Features
the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 160 ns
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)
NP20P04SLG-E1-AY Applications
There are a lot of Renesas Electronics America
NP20P04SLG-E1-AY applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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