NP20P04SLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

25m Ω @ 10A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

80 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

60A

Power Dissipation-Max :

1.2W Ta 38W Tc

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

160 ns

Drain-source On Resistance-Max :

0.038Ohm

Continuous Drain Current (ID) :

20A

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

40V

ECCN Code :

EAR99

Terminal Position :

Single

Number of Terminations :

2

DS Breakdown Voltage-Min :

40V

Radiation Hardening :

No

Transistor Element Material :

SILICON

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Turn On Delay Time :

8 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

6ns

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Terminal Form :

Gull wing

Published :

1997

Avalanche Energy Rating (Eas) :

40 mJ

Power Dissipation :

1.2W

Vgs (Max) :

±20V

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant