NP20P04SLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation :

1.2W

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 10V

Drain to Source Voltage (Vdss) :

40V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

60A

Pin Count :

3

Operating Temperature :

175°C TJ

Continuous Drain Current (ID) :

20A

Number of Terminations :

2

Drain-source On Resistance-Max :

0.038Ohm

Mounting Type :

Surface Mount

Fall Time (Typ) :

80 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

25m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Mount :

Surface Mount

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Terminal Position :

Single

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

40V

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

40 mJ

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

160 ns

Published :

1997

Rise Time :

6ns

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

1.2W Ta 38W Tc

Turn On Delay Time :

8 ns