NP15P04SLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

65 ns

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

40V

Pin Count :

3

Turn-Off Delay Time :

100 ns

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Turn On Delay Time :

7 ns

Number of Elements :

1

Rise Time :

5ns

Avalanche Energy Rating (Eas) :

25 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Operating Temperature :

175°C TJ

Drain-source On Resistance-Max :

0.06Ohm

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Published :

2008

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Terminal Position :

Single

Power Dissipation-Max :

1.2W Ta 30W Tc

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.2W

Radiation Hardening :

No

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

45A

Rds On (Max) @ Id, Vgs :

40m Ω @ 7.5A, 10V

Continuous Drain Current (ID) :

15A

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON