NP15P04SLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Case Connection :

DRAIN

Power Dissipation :

1.2W

Continuous Drain Current (ID) :

15A

Drain-source On Resistance-Max :

0.06Ohm

Transistor Element Material :

SILICON

Published :

2008

Rise Time :

5ns

Power Dissipation-Max :

1.2W Ta 30W Tc

Turn On Delay Time :

7 ns

Factory Lead Time :

16 Weeks

Number of Terminations :

2

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

25 mJ

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Turn-Off Delay Time :

100 ns

Operating Temperature :

175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

45A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

40m Ω @ 7.5A, 10V

DS Breakdown Voltage-Min :

40V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

65 ns

Transistor Application :

SWITCHING