NMSD200B01-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1mm

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

40 ns

Terminal Form :

Gull wing

Width :

1.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Channels :

1

Lead Free :

Lead Free

FET Feature :

Schottky Diode (Isolated)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

200mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.2A

Voltage - Rated DC :

60V

Feedback Cap-Max (Crss) :

5 pF

Vgs (Max) :

±20V

Operating Mode :

Depletion Mode

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3 Ω @ 50mA, 5V

Drain-source On Resistance-Max :

2Ohm

Number of Terminations :

6

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current Rating :

200mA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Length :

2.2mm

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

200mA

Weight :

6.010099mg

Radiation Hardening :

No

Turn On Delay Time :

20 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

Power Dissipation :

200mW

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 1mA

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Number of Pins :

6

Pbfree Code :

yes

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V