NGTB40N60FL2WG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Switching Energy :

970μJ (on), 440μJ (off)

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Width :

5.3mm

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

600V

Element Configuration :

Single

Height :

21.08mm

IGBT Type :

Trench Field Stop

Collector Emitter Saturation Voltage :

1.85V

Published :

2011

Power - Max :

366W

Gate-Emitter Voltage-Max :

20V

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

6.5V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

160A

Gate Charge :

170nC

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Weight :

38.000013g

Test Condition :

400V, 40A, 10 Ω, 15V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Td (on/off) @ 25°C :

84ns/177ns

Length :

16.26mm

Operating Temperature :

-55°C~175°C TJ

Max Collector Current :

80A

JESD-609 Code :

e3

Mount :

Through Hole

Packaging :

Tube

Reverse Recovery Time :

72 ns

REACH SVHC :

No SVHC

Max Power Dissipation :

366W

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 40A