NDUL03N150CG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Packaging :

Tube

Lead Free :

Lead Free

Vgs (Max) :

±30V

Height :

5.5mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain to Source Voltage (Vdss) :

1500V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Pulsed Drain Current-Max (IDM) :

5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Turn-Off Delay Time :

140 ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

15 ns

Length :

43.8mm

Mounting Type :

Through Hole

Pin Count :

3

Width :

15.5mm

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 30V

REACH SVHC :

No SVHC

Power Dissipation-Max :

3W Ta 50W Tc

Number of Terminations :

3

Pbfree Code :

yes

Number of Channels :

1

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Fall Time (Typ) :

47 ns

Weight :

6.961991g

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

24ns

Factory Lead Time :

24 Weeks

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Power Dissipation :

3W

Continuous Drain Current (ID) :

2.5A

Published :

2000

Rds On (Max) @ Id, Vgs :

10.5 Ω @ 1.25A, 10V

Package / Case :

TO-3PL

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant