NDT3055
- Mfr.Part #
- NDT3055
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 22,428
- In Stock :
- 22,428
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Max Junction Temperature (Tj) :
- 150°C
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 4A, 10V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Nominal Vgs :
- 3 V
- Case Connection :
- DRAIN
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 37 ns
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- -65°C~150°C TJ
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 30V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Weight :
- 188mg
- Fall Time (Typ) :
- 30 ns
- Resistance :
- 100MOhm
- Published :
- 2017
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Rise Time :
- 18ns
- Pulsed Drain Current-Max (IDM) :
- 25A
- Continuous Drain Current (ID) :
- 4A
- Number of Pins :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 3W
- Height :
- 1.8mm
- Contact Plating :
- Tin
- Dual Supply Voltage :
- 60V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Current Rating :
- 3.7A
- Power Dissipation-Max :
- 3W Ta
- Drain Current-Max (Abs) (ID) :
- 4A
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 3V
- Datasheets
- NDT3055
N-Channel Tape & Reel (TR) 100m Ω @ 4A, 10V ±20V 250pF @ 30V 15nC @ 10V TO-261-4, TO-261AA
NDT3055 Description
The NDT3055 is an N-Channel enhancement mode power field effect transistor manufactured by Fairchild using its patented, high cell density, DMOS technology. This ultra-high-density technology is specifically designed to reduce on-state resistance while providing excellent switching performance.
NDT3055 Features
4A, 60V. RDS(ON)=0.100Ω@Vas= 10V.
High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package.
NDT3055 Applications
Power Management
Consumer Electronics
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NDT3055 | Fairchild Semiconductor | 22,428 | MOSFET N-CH 60V 4A SOT-223-4 |
| NDT3055L | Fairchild Semiconductor | 222,753 | MOSFET N-CH 60V 4A SOT-223-4 |
















