NDT2955

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Height :

1.8mm

Gate to Source Voltage (Vgs) :

20V

Published :

2002

Power Dissipation-Max :

3W Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3W

Transistor Element Material :

SILICON

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs (Max) :

±20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-60V

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Number of Elements :

1

Weight :

250.2mg

Length :

6.5mm

Package / Case :

TO-261-4, TO-261AA

Width :

3.56mm

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Nominal Vgs :

-2.6 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

19 ns

Case Connection :

DRAIN

Resistance :

300mOhm

Current Rating :

-2.5A

Threshold Voltage :

2.6V

Voltage - Rated DC :

-60V

Rds On (Max) @ Id, Vgs :

300m Ω @ 2.5A, 10V

REACH SVHC :

No SVHC

Contact Plating :

Tin

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Pbfree Code :

yes

Fall Time (Typ) :

6 ns

Terminal Form :

Gull wing

Rise Time :

10ns

Number of Pins :

4

Transistor Application :

SWITCHING

Radiation Hardening :

No

Continuous Drain Current (ID) :

2.5A

Input Capacitance (Ciss) (Max) @ Vds :

601pF @ 30V

Number of Channels :

1

JESD-609 Code :

e3

Dual Supply Voltage :

60V