NDT2955

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Mfr.Part #
NDT2955
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET P-CH 60V 2.5A SOT-223-4
Stock
34,577
In Stock :
34,577

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Published :
2002
Height :
1.8mm
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Dual Supply Voltage :
60V
Resistance :
300mOhm
Mounting Type :
Surface Mount
Turn On Delay Time :
12 ns
Rise Time :
10ns
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Threshold Voltage :
2.6V
Case Connection :
DRAIN
Nominal Vgs :
-2.6 V
Number of Terminations :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
300m Ω @ 2.5A, 10V
Fall Time (Typ) :
6 ns
Length :
6.5mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Channels :
1
Power Dissipation :
3W
Power Dissipation-Max :
3W Ta
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Voltage - Rated DC :
-60V
Drain to Source Breakdown Voltage :
-60V
Factory Lead Time :
8 Weeks
ECCN Code :
EAR99
Pbfree Code :
yes
FET Type :
P-Channel
Continuous Drain Current (ID) :
2.5A
Vgs (Max) :
±20V
Turn-Off Delay Time :
19 ns
Number of Elements :
1
Terminal Form :
Gull wing
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Number of Pins :
4
Weight :
250.2mg
Contact Plating :
Tin
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
2.5A Ta
Package / Case :
TO-261-4, TO-261AA
Operating Temperature :
-55°C~150°C TJ
Width :
3.56mm
Max Junction Temperature (Tj) :
150°C
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
601pF @ 30V
Terminal Position :
Dual
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Current Rating :
-2.5A
Datasheets
NDT2955
Introducing Transistors - FETs, MOSFETs - Single onsemi NDT2955 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:4, Number of Channels:1, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, NDT2955 pinout, NDT2955 datasheet PDF, NDT2955 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NDT2955 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDT2955


P-Channel Tape & Reel (TR) 300m Ω @ 2.5A, 10V ±20V 601pF @ 30V 15nC @ 10V TO-261-4, TO-261AA

NDT2955 Description


NDT2955 belongs to the family of P-channel enhancement-mode field-effect transistors (FETs) that are manufactured by ON Semiconductor based on the advanced high-voltage Trench process. It features a high-density cell design for extremely low RDS (on), as well as high power and current handling capability in a widely used surface-mount package. Due to its high quality and reliable performance, it is well suited for power management applications. More information can be found in the NDT2955 datasheet.



NDT2955 Features


  • Advanced high-voltage Trench process

  • High-density cell design 

  • Extremely low RDS (on)

  • High power and current handling capability

  • Available in the SOT-223 package



NDT2955 Applications


  • DC-DC converter

  • Power management


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