NDT2955
- Mfr.Part #
- NDT2955
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 2.5A SOT-223-4
- Stock
- 34,577
- In Stock :
- 34,577
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Published :
- 2002
- Height :
- 1.8mm
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Dual Supply Voltage :
- 60V
- Resistance :
- 300mOhm
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 12 ns
- Rise Time :
- 10ns
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Threshold Voltage :
- 2.6V
- Case Connection :
- DRAIN
- Nominal Vgs :
- -2.6 V
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 2.5A, 10V
- Fall Time (Typ) :
- 6 ns
- Length :
- 6.5mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Channels :
- 1
- Power Dissipation :
- 3W
- Power Dissipation-Max :
- 3W Ta
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- -60V
- Drain to Source Breakdown Voltage :
- -60V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 2.5A
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 19 ns
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Weight :
- 250.2mg
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Ta
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.56mm
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 601pF @ 30V
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Current Rating :
- -2.5A
- Datasheets
- NDT2955

P-Channel Tape & Reel (TR) 300m Ω @ 2.5A, 10V ±20V 601pF @ 30V 15nC @ 10V TO-261-4, TO-261AA
NDT2955 Description
NDT2955 belongs to the family of P-channel enhancement-mode field-effect transistors (FETs) that are manufactured by ON Semiconductor based on the advanced high-voltage Trench process. It features a high-density cell design for extremely low RDS (on), as well as high power and current handling capability in a widely used surface-mount package. Due to its high quality and reliable performance, it is well suited for power management applications. More information can be found in the NDT2955 datasheet.
NDT2955 Features
-
Advanced high-voltage Trench process
-
High-density cell design
-
Extremely low RDS (on)
-
High power and current handling capability
-
Available in the SOT-223 package
NDT2955 Applications
-
DC-DC converter
-
Power management
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