NDC652P
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- Mfr.Part #
- NDC652P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2.4A SUPERSOT6
- Stock
- 12,713
- In Stock ：
- 12,713
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 110mOhm @ 3.1A, 10V
- Power Dissipation-Max :
- 1.6W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 15V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Supplier Device Package :
- SuperSOT™-6
- Vgs (Max) :
- -20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Datasheets
- NDC652P
P-Channel Tape & Reel (TR) 110mOhm @ 3.1A, 10V -20V 290pF @ 15V 20nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
NDC652P Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
NDC652P Features
2.4A, -30V. RDS(ON) = 0.18W @ VGS = -4.5V
RDS(ON) = 0.11W @ VGS = -10V.
Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
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