NDB5060L
- Mfr.Part #
- NDB5060L
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 26A D2PAK
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Turn On Delay Time :
- 13 ns
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 16V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±16V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 60V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current Rating :
- 26A
- Continuous Drain Current (ID) :
- 26A
- Turn-Off Delay Time :
- 45 ns
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 13A, 10V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 68W Tc
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.05Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Rise Time :
- 200ns
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 840pF @ 30V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 60V
- Case Connection :
- DRAIN
- Current :
- 26A
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 102 ns
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 68W
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- NDB5060L

N-Channel Tape & Reel (TR) 35m Ω @ 13A, 10V ±16V 840pF @ 30V 24nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDB5060L Description
NDB5060L is a type of N-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance, delivering advanced switching performance, and withstanding high energy pulse. It is well suited for low-voltage applications including DC/DC converters and high-efficiency switching circuits requiring low in-line power loss and resistance to transients.
NDB5060L Features
-
Proprietary, high cell density, DMOS technology
-
Low RDS (on)
-
High-density cell design
-
Low on-state resistance
-
Available in the TO-263AB package
NDB5060L Applications
-
Automotive
-
DC/DC converters
-
PWM motor controls
-
High-efficiency switching circuits
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