NCV8440STT3G

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Mfr.Part #
NCV8440STT3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 59V 2.6A SOT223
Stock
38,693
In Stock :
38,693

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Number of Terminations :
3
Vgs (Max) :
±15V
Pin Count :
4
JESD-609 Code :
e3
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
52V
Lifecycle Status :
CONSULT SALES OFFICE (Last Updated: 4 days ago)
Rds On (Max) @ Id, Vgs :
110m Ω @ 2.6A, 10V
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Dual
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PDSO-G3
Number of Pins :
4
Vgs(th) (Max) @ Id :
1.9V @ 100μA
Package / Case :
TO-261-4, TO-261AA
Published :
2005
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
2.6A
Drive Voltage (Max Rds On,Min Rds On) :
3.5V 10V
Pbfree Code :
yes
Power Dissipation-Max :
1.69W Ta
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
155pF @ 35V
FET Type :
N-Channel
Mount :
Surface Mount
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
10A
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.95Ohm
RoHS Status :
RoHS Compliant
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
2.6A Ta
Avalanche Energy Rating (Eas) :
110 mJ
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
59V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Datasheets
NCV8440STT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NCV8440STT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, NCV8440STT3G pinout, NCV8440STT3G datasheet PDF, NCV8440STT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NCV8440STT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NCV8440STT3G


N-Channel Tape & Reel (TR) 110m Ω @ 2.6A, 10V ±15V 155pF @ 35V 4.5nC @ 4.5V 59V TO-261-4, TO-261AA

NCV8440STT3G Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 110 mJ.A device's maximum input capacitance is 155pF @ 35V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 10A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 52V.To operate this transistor, you need to apply a 59V drain to source voltage (Vdss).This device uses no drive voltage (3.5V 10V) to reduce its overall power consumption.

NCV8440STT3G Features


the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 2.6A
based on its rated peak drain current 10A.
a 59V drain to source voltage (Vdss)


NCV8440STT3G Applications


There are a lot of ON Semiconductor
NCV8440STT3G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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