NCV8440STT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Published :

2005

Continuous Drain Current (ID) :

2.6A

Mount :

Surface Mount

Power Dissipation-Max :

1.69W Ta

Number of Pins :

4

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

110m Ω @ 2.6A, 10V

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.95Ohm

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

59V

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.9V @ 100μA

Qualification Status :

Not Qualified

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±15V

Lifecycle Status :

CONSULT SALES OFFICE (Last Updated: 4 days ago)

DS Breakdown Voltage-Min :

52V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

10A

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

3.5V 10V

Avalanche Energy Rating (Eas) :

110 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 35V

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3