NCV8440ASTT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 35V

Continuous Drain Current (ID) :

2.6A

Vgs (Max) :

±15V

Transistor Application :

SWITCHING

Package / Case :

TO-261-4, TO-261AA

Halogen Free :

Halogen Free

Case Connection :

DRAIN

Power Dissipation-Max :

1.69W Ta

Surface Mount :

yes

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

59V

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

110m Ω @ 2.6A, 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Number of Elements :

1

Avalanche Energy Rating (Eas) :

110 mJ

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

10A

Gate to Source Voltage (Vgs) :

15V

DS Breakdown Voltage-Min :

52V

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

3.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

4

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Vgs(th) (Max) @ Id :

1.9V @ 100μA

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.11Ohm