NCP5111DR2G

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Mfr.Part #
NCP5111DR2G
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
21,492
In Stock :
21,492

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Manufacturer :
onsemi
Product Category :
Gate Drivers
Height :
1.5mm
Width :
4mm
Max Supply Current :
5mA
Turn On Delay Time :
1.17 μs
Turn-Off Delay Time :
170 ns
Rise Time :
160ns
Current - Peak Output (Source, Sink) :
250mA 500mA
JESD-609 Code :
e3
Halogen Free :
Halogen Free
Pin Count :
8
Number of Drivers :
2
Output Voltage :
20V
Published :
2008
Rise / Fall Time (Typ) :
85ns 35ns
Factory Lead Time :
4 Weeks
Fall Time (Typ) :
75 ns
Termination :
SMD/SMT
Channel Type :
SYNCHRONOUS
Output Current Flow Direction :
SOURCE SINK
Terminal Finish :
Tin (Sn)
Driven Configuration :
Half-Bridge
Number of Pins :
8
Terminal Position :
Dual
Power Supplies :
15V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Gate Type :
IGBT, N-Channel MOSFET
Turn Off Time :
0.17 µs
Length :
5mm
Built-in Protections :
UNDER VOLTAGE
Packaging :
Tape and Reel (TR)
Max Output Current :
500mA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Input Type :
Non-Inverting
Pbfree Code :
yes
Voltage - Supply :
10V~20V
Mount :
Surface Mount
High Side Voltage - Max (Bootstrap) :
600V
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Nominal Supply Current :
5mA
Number of Terminations :
8
Supply Voltage :
15V
Number of Functions :
1
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Radiation Hardening :
No
ECCN Code :
EAR99
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
40
Logic Voltage - VIL, VIH :
0.8V 2.3V
REACH SVHC :
No SVHC
Base Part Number :
NCP5111
Operating Temperature :
-40°C~125°C TJ
Datasheets
NCP5111DR2G
Introducing Gate Drivers onsemi NCP5111DR2G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Mounting Type:Surface Mount, Base Part Number:NCP5111, Operating Temperature:-40°C~125°C TJ, NCP5111DR2G pinout, NCP5111DR2G datasheet PDF, NCP5111DR2G amp .Beyond Gate Drivers onsemi NCP5111DR2G ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NCP5111DR2G


Gate Drivers onsemi NCP5111DR2G Overview

The onsemi NCP5111DR2G is a robust and high-performance IC gate driver designed to cater to the demanding requirements of half-bridge power architectures. This driver integrates powerful features into an 8SOIC package, making it ideal for streamlined, high-density installations. Key aspects of this product include high peak output currents and optimized dead-time control, which facilitate improved efficiency and reliability in system operations. This Gate Drivers onsemi NCP5111DR2G device is particularly well-suited for applications requiring efficient switching performance in a compact footprint.

NCP5111DR2G Features

The NCP5111DR2G offers a range of features designed to enhance its functionality and performance in various applications. These include dual outputs for driving both high-side and low-side MOSFETs, a high peak output current capability that ensures reliable operation even under stressful conditions, and a wide supply voltage range. Additionally, its built-in undervoltage lockout and thermal shutdown features add an extra layer of protection, ensuring safe and continuous operation.

NCP5111DR2G Applications

  • DC-DC Converters: Utilizes its high peak current and dual-output capability to efficiently manage the switching of power MOSFETs, enhancing converter reliability and performance.
  • Motor Control Systems: Employs robust drive characteristics to control motor driver MOSFETs in applications ranging from consumer electronics to industrial automation, ensuring precise and safe motor operations.
  • Renewable Energy Systems: Supports solar inverters and wind turbine converters by delivering reliable and efficient gate driving, crucial for long-term energy conversion stability and efficiency.
  • Power Supply Units: Ideal for driving MOSFETs in power supplies, where stable and robust gate driving enhances overall power supply efficiency and reliability.
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Shipping Cost

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