MVSF2N02ELT1G
- Mfr.Part #
- MVSF2N02ELT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2.8A SOT23-3
- Stock
- 83,430
- In Stock :
- 83,430
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Pulsed Drain Current-Max (IDM) :
- 5A
- Turn-Off Delay Time :
- 28 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 8V
- Turn On Delay Time :
- 6 ns
- Rise Time :
- 95ns
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.085Ohm
- DS Breakdown Voltage-Min :
- 20V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 3.6A, 4.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 3.5nC @ 4V
- Power Dissipation-Max :
- 1.25W Ta
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 125 ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 2.8A
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Weight :
- 1.437803g
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Number of Elements :
- 1
- Vgs (Max) :
- ±8V
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Ta
- Terminal Finish :
- Tin (Sn)
- Published :
- 2014
- Reference Standard :
- AEC-Q101
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 5V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MVSF2N02ELT1G
MVSF2N02ELT1G Documents

N-Channel Tape & Reel (TR) 85m Ω @ 3.6A, 4.5V ±8V 150pF @ 5V 3.5nC @ 4V 20V TO-236-3, SC-59, SOT-23-3
MVSF2N02ELT1G Overview
The maximum input capacitance of this device is 150pF @ 5V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
MVSF2N02ELT1G Features
a continuous drain current (ID) of 2.8A
the turn-off delay time is 28 ns
based on its rated peak drain current 5A.
a 20V drain to source voltage (Vdss)
MVSF2N02ELT1G Applications
There are a lot of ON Semiconductor
MVSF2N02ELT1G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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