MTY100N10E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

378nC @ 10V

Vgs (Max) :

±20V

Power Dissipation-Max :

300W Tc

Pulsed Drain Current-Max (IDM) :

300A

Peak Reflow Temperature (Cel) :

240

Current Rating :

100mA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

10640pF @ 25V

ECCN Code :

EAR99

Terminal Position :

Single

Qualification Status :

Not Qualified

Package / Case :

TO-264-3, TO-264AA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Voltage - Rated DC :

100V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

11m Ω @ 50A, 10V

Rise Time :

490ns

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e0

Published :

2004

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

250 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Number of Terminations :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Continuous Drain Current (ID) :

100A

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.011Ohm

FET Type :

N-Channel

Pin Count :

3