MTP6P20E
- Mfr.Part #
- MTP6P20E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 6A TO220AB
- Stock
- 24,349
- In Stock :
- 24,349
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 1Ohm
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 6A
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 200V
- Terminal Finish :
- TIN LEAD
- Surface Mount :
- No
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 21A
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 180 mJ
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 200V
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 3A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Terminal Position :
- Single
- Packaging :
- Tube
- Power Dissipation-Max :
- 75W Tc
- Pbfree Code :
- No
- Datasheets
- MTP6P20E

P-Channel Tube 1 Ω @ 3A, 10V ±20V 750pF @ 25V 30nC @ 10V 200V TO-220-3
MTP6P20E Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 180 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 750pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 21A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
MTP6P20E Features
the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 21A.
a 200V drain to source voltage (Vdss)
MTP6P20E Applications
There are a lot of Rochester Electronics, LLC
MTP6P20E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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