MTP6P20E

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Mfr.Part #
MTP6P20E
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 200V 6A TO220AB
Stock
24,349
In Stock :
24,349

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
COMMERCIAL
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
P-Channel
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Drain-source On Resistance-Max :
1Ohm
JESD-30 Code :
R-PSFM-T3
Drain Current-Max (Abs) (ID) :
6A
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
200V
Terminal Finish :
TIN LEAD
Surface Mount :
No
RoHS Status :
Non-RoHS Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 25V
Pulsed Drain Current-Max (IDM) :
21A
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Unknown
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
180 mJ
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
200V
Rds On (Max) @ Id, Vgs :
1 Ω @ 3A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e0
Terminal Position :
Single
Packaging :
Tube
Power Dissipation-Max :
75W Tc
Pbfree Code :
No
Datasheets
MTP6P20E
Introducing Transistors - FETs, MOSFETs - Single onsemi MTP6P20E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, MTP6P20E pinout, MTP6P20E datasheet PDF, MTP6P20E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MTP6P20E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MTP6P20E


P-Channel Tube 1 Ω @ 3A, 10V ±20V 750pF @ 25V 30nC @ 10V 200V TO-220-3

MTP6P20E Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 180 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 750pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 21A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

MTP6P20E Features


the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 21A.
a 200V drain to source voltage (Vdss)


MTP6P20E Applications


There are a lot of Rochester Electronics, LLC
MTP6P20E applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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