MTP36N06V
- Mfr.Part #
- MTP36N06V
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 32A TO220AB
- Stock
- 8,243
- In Stock :
- 8,243
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 16A, 10V
- Avalanche Energy Rating (Eas) :
- 205 mJ
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 32A
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Rise Time :
- 138ns
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 90W Tc
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.04Ohm
- Reach Compliance Code :
- not_compliant
- Voltage - Rated DC :
- 60V
- Pin Count :
- 3
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 112A
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e0
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Transistor Element Material :
- SILICON
- Current Rating :
- 32A
- Datasheets
- MTP36N06V

N-Channel Tube 40m Ω @ 16A, 10V ±20V 1700pF @ 25V 50nC @ 10V TO-220-3
Description
The MTP36N06V is a Power MOSFET, 32 Amps, 60 Volts with N?Channel TO?220. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and power motor controls.
Features
-
Avalanche Energy Specified
-
IDSS and VDS(on) Specified at Elevated Temperature
-
Maximum junction temperature (TJ(max))
-
Continuous drain current (ID)
-
Safe operating area (SOA)
Applications
-
Small motor control
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
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