MTM761230LBF
- Mfr.Part #
- MTM761230LBF
- Manufacturer
- Panasonic
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A WSMINI6
- Stock
- 85,263
- In Stock :
- 85,263
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 6-SMD, Flat Leads
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Number of Pins :
- 6
- Threshold Voltage :
- -850mV
- Mounting Type :
- Surface Mount
- Width :
- 1.7mm
- Height :
- 700μm
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Drain Current-Max (Abs) (ID) :
- 3A
- Drain to Source Breakdown Voltage :
- -20V
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- Operating Mode :
- Depletion Mode
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Element Configuration :
- Single
- Length :
- 2mm
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 850 mV
- Resistance :
- 55mOhm
- Vgs(th) (Max) @ Id :
- 1.3V @ 1mA
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 700mW
- Power Dissipation-Max :
- 700mW Ta
- Gate to Source Voltage (Vgs) :
- 10V
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- -3A
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4V
- Vgs (Max) :
- ±10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 1A, 4V
- Factory Lead Time :
- 10 Weeks
- Terminal Position :
- Dual
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- MTM761230LBF

P-Channel Tape & Reel (TR) 55m Ω @ 1A, 4V ±10V 1000pF @ 10V 20V 6-SMD, Flat Leads
MTM761230LBF Overview
A device's maximal input capacitance is 1000pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 3A, which is the maximum continuous current the device can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -850mV threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 4V).
MTM761230LBF Features
a continuous drain current (ID) of -3A
a drain-to-source breakdown voltage of -20V voltage
a threshold voltage of -850mV
a 20V drain to source voltage (Vdss)
MTM761230LBF Applications
There are a lot of Panasonic Electronic Components
MTM761230LBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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