MTD6P10E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

245

Published :

2004

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

18A

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Rise Time :

29ns

Vgs (Max) :

±15V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Additional Feature :

AVALANCHE RATED

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Continuous Drain Current (ID) :

6A

Current Rating :

-6A

Number of Elements :

1

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

660m Ω @ 3A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

6A

Voltage - Rated DC :

-100V

Reach Compliance Code :

not_compliant

Number of Pins :

3

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Number of Terminations :

2

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

180 mJ

FET Type :

P-Channel

Power Dissipation-Max :

1.75W Ta 50W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Drain-source On Resistance-Max :

0.66Ohm

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e0