MTD6N20ET5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.75W Ta 50W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Terminal Position :

Single

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Drain-source On Resistance-Max :

0.7Ohm

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

18A

Avalanche Energy Rating (Eas) :

54 mJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

700m Ω @ 3A, 10V

DS Breakdown Voltage-Min :

200V

Drain Current-Max (Abs) (ID) :

6A

Transistor Element Material :

SILICON

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

10V