MTD6N20ET4
- Mfr.Part #
- MTD6N20ET4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 6A DPAK
- Stock
- 3,276
- In Stock :
- 3,276
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 18A
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 3A, 10V
- Rise Time :
- 29ns
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 200V
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 22 ns
- Current Rating :
- 6A
- Continuous Drain Current (ID) :
- 6A
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 200V
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 6A
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- JESD-609 Code :
- e0
- Drain-source On Resistance-Max :
- 0.7Ohm
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.75W
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 25V
- Power Dissipation :
- 50W
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2005
- Max Operating Temperature :
- 150°C
- Pbfree Code :
- No
- Lead Free :
- Contains Lead
- Peak Reflow Temperature (Cel) :
- 240
- Fall Time (Typ) :
- 20 ns
- Terminal Finish :
- TIN LEAD
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Datasheets
- MTD6N20ET4

N-Channel Cut Tape (CT) 700m Ω @ 3A, 10V 480pF @ 25V 21nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
MTD6N20ET4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 54 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 480pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 22 ns.Peak drain current is 18A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.
MTD6N20ET4 Features
the avalanche energy rating (Eas) is 54 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 18A.
MTD6N20ET4 Applications
There are a lot of ON Semiconductor
MTD6N20ET4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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