MTD6N15T4GV
- Mfr.Part #
- MTD6N15T4GV
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 6A DPAK
- Stock
- 45,554
- In Stock :
- 45,554
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 1.25W Ta 20W Tc
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 6A
- FET Type :
- N-Channel
- Supplier Device Package :
- DPAK
- Published :
- 2006
- Power Dissipation :
- 20W
- Input Capacitance :
- 1.2nF
- Min Operating Temperature :
- -65°C
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Rds On (Max) @ Id, Vgs :
- 300mOhm @ 3A, 10V
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 150V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Rds On Max :
- 300 mΩ
- Drain to Source Resistance :
- 300mOhm
- Drain to Source Voltage (Vdss) :
- 150V
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Datasheets
- MTD6N15T4GV

N-Channel Tape & Reel (TR) 300mOhm @ 3A, 10V ±20V 1200pF @ 25V 30nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63
MTD6N15T4GV Overview
A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 300mOhm.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
MTD6N15T4GV Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 150V voltage
single MOSFETs transistor is 300mOhm
a 150V drain to source voltage (Vdss)
MTD6N15T4GV Applications
There are a lot of ON Semiconductor
MTD6N15T4GV applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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