MTD6N15T4GV

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Mfr.Part #
MTD6N15T4GV
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 150V 6A DPAK
Stock
45,554
In Stock :
45,554

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Max Operating Temperature :
150°C
Power Dissipation-Max :
1.25W Ta 20W Tc
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
6A
FET Type :
N-Channel
Supplier Device Package :
DPAK
Published :
2006
Power Dissipation :
20W
Input Capacitance :
1.2nF
Min Operating Temperature :
-65°C
Element Configuration :
Single
Operating Temperature :
-65°C~150°C TJ
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Rds On (Max) @ Id, Vgs :
300mOhm @ 3A, 10V
RoHS Status :
RoHS Compliant
Drain to Source Breakdown Voltage :
150V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Rds On Max :
300 mΩ
Drain to Source Resistance :
300mOhm
Drain to Source Voltage (Vdss) :
150V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Datasheets
MTD6N15T4GV
Introducing Transistors - FETs, MOSFETs - Single onsemi MTD6N15T4GV from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MTD6N15T4GV pinout, MTD6N15T4GV datasheet PDF, MTD6N15T4GV amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MTD6N15T4GV ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MTD6N15T4GV


N-Channel Tape & Reel (TR) 300mOhm @ 3A, 10V ±20V 1200pF @ 25V 30nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63

MTD6N15T4GV Overview


A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 300mOhm.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

MTD6N15T4GV Features


a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 150V voltage
single MOSFETs transistor is 300mOhm
a 150V drain to source voltage (Vdss)


MTD6N15T4GV Applications


There are a lot of ON Semiconductor
MTD6N15T4GV applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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