MTD6N15T4G

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Mfr.Part #
MTD6N15T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 150V 6A DPAK
Stock
49,804
In Stock :
49,804

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
RoHS Compliant
Continuous Drain Current (ID) :
6A
Element Configuration :
Single
Max Operating Temperature :
150°C
Power Dissipation :
20W
FET Type :
N-Channel
Vgs (Max) :
±20V
Mount :
Surface Mount
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
1.25W Ta 20W Tc
Rds On (Max) @ Id, Vgs :
300mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Published :
2006
Input Capacitance :
1.2nF
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-65°C~150°C TJ
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Drain to Source Voltage (Vdss) :
150V
Drain to Source Breakdown Voltage :
150V
Min Operating Temperature :
-65°C
Drain to Source Resistance :
300mOhm
Rds On Max :
300 mΩ
Supplier Device Package :
DPAK
Datasheets
MTD6N15T4G
Introducing Transistors - FETs, MOSFETs - Single onsemi MTD6N15T4G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-65°C~150°C TJ, MTD6N15T4G pinout, MTD6N15T4G datasheet PDF, MTD6N15T4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MTD6N15T4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MTD6N15T4G


N-Channel Tape & Reel (TR) 300mOhm @ 3A, 10V ±20V 1200pF @ 25V 30nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63

MTD6N15T4GV Overview


A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 300mOhm.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

MTD6N15T4GV Features


a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 150V voltage
single MOSFETs transistor is 300mOhm
a 150V drain to source voltage (Vdss)


MTD6N15T4GV Applications


There are a lot of ON Semiconductor
MTD6N15T4GV applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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