MTD20P06HDLT4
- Mfr.Part #
- MTD20P06HDLT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 15A DPAK
- Stock
- 9,018
- In Stock :
- 9,018
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Additional Feature :
- ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- FET Type :
- P-Channel
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 5V
- DS Breakdown Voltage-Min :
- 60V
- JESD-609 Code :
- e0
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 72W Tc
- Drain to Source Voltage (Vdss) :
- 60V
- JESD-30 Code :
- R-PSSO-G2
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.175Ohm
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190pF @ 25V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 7.5A, 5V
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 15A
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- RoHS Status :
- Non-RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 45A
- Vgs (Max) :
- ±15V
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Datasheets
- MTD20P06HDLT4

P-Channel Tape & Reel (TR) 175m Ω @ 7.5A, 5V ±15V 1190pF @ 25V 29nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
MTD20P06HDLT4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 300 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1190pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 15A.Peak drain current is 45A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
MTD20P06HDLT4 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 45A.
a 60V drain to source voltage (Vdss)
MTD20P06HDLT4 Applications
There are a lot of ON Semiconductor
MTD20P06HDLT4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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