MTD10N10ELT4

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Mfr.Part #
MTD10N10ELT4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 10A DPAK
Stock
2,081
In Stock :
2,081

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
2V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
5V
Current Rating :
10A
Number of Terminations :
2
Mount :
Surface Mount
FET Type :
N-Channel
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
220m Ω @ 5A, 5V
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
240
ECCN Code :
EAR99
Power Dissipation-Max :
1.75W Ta 40W Tc
Drain-source On Resistance-Max :
0.22Ohm
Lead Free :
Contains Lead
Voltage - Rated DC :
100V
Transistor Application :
SWITCHING
RoHS Status :
Non-RoHS Compliant
Terminal Position :
Single
Terminal Finish :
Tin/Lead (Sn/Pb)
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Packaging :
Tape and Reel (TR)
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Published :
1996
Reach Compliance Code :
not_compliant
Rise Time :
74ns
Case Connection :
DRAIN
Number of Pins :
3
Avalanche Energy Rating (Eas) :
50 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Continuous Drain Current (ID) :
10A
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
1040pF @ 25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 5V
JESD-609 Code :
e0
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
30
Pin Count :
3
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Datasheets
MTD10N10ELT4
Introducing Transistors - FETs, MOSFETs - Single onsemi MTD10N10ELT4 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MTD10N10ELT4 pinout, MTD10N10ELT4 datasheet PDF, MTD10N10ELT4 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MTD10N10ELT4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MTD10N10ELT4


N-Channel Tape & Reel (TR) 220m Ω @ 5A, 5V ±15V 1040pF @ 25V 15nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

MTD10N10ELT4 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1040pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.In order to reduce power consumption, this device uses a drive voltage of 5V volts (5V).

MTD10N10ELT4 Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 10A


MTD10N10ELT4 Applications


There are a lot of ON Semiconductor
MTD10N10ELT4 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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