MTD10N10ELT4
- Mfr.Part #
- MTD10N10ELT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10A DPAK
- Stock
- 2,081
- In Stock :
- 2,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Current Rating :
- 10A
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 5A, 5V
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 240
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 1.75W Ta 40W Tc
- Drain-source On Resistance-Max :
- 0.22Ohm
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- 100V
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Published :
- 1996
- Reach Compliance Code :
- not_compliant
- Rise Time :
- 74ns
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 10A
- Vgs (Max) :
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1040pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- JESD-609 Code :
- e0
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Datasheets
- MTD10N10ELT4

N-Channel Tape & Reel (TR) 220m Ω @ 5A, 5V ±15V 1040pF @ 25V 15nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
MTD10N10ELT4 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1040pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.In order to reduce power consumption, this device uses a drive voltage of 5V volts (5V).
MTD10N10ELT4 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 10A
MTD10N10ELT4 Applications
There are a lot of ON Semiconductor
MTD10N10ELT4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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