MTB75N05HDT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta 125W Tc

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0095Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Voltage - Rated DC :

50V

Pin Count :

3

Continuous Drain Current (ID) :

75A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Terminations :

2

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

500 mJ

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

225A

Terminal Form :

Gull wing

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

170ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Current Rating :

75A

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

ECCN Code :

EAR99