MTB30P06VT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

105A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

240

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

60V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

450 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

60V

Additional Feature :

AVALANCHE RATED

Pbfree Code :

No

Drain Current-Max (Abs) (ID) :

30A

Vgs (Max) :

±15V

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Terminal Finish :

TIN LEAD

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2.19pF @ 25V

Rds On (Max) @ Id, Vgs :

80m Ω @ 15A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.08Ohm

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation-Max :

3W Ta 125W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1