MTB29N15ET4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

2

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.07Ohm

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

125W

Operating Temperature (Max) :

150°C

DS Breakdown Voltage-Min :

150V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

102A

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

421 mJ

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

29A