MTB23P06VT4
- Mfr.Part #
- MTB23P06VT4
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 23A D2PAK
- Stock
- 22,174
- In Stock :
- 22,174
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 11.5A, 10V
- Avalanche Energy Rating (Eas) :
- 794 mJ
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 81A
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Rise Time :
- 98.3ns
- Current Rating :
- -23A
- Published :
- 2004
- Terminal Position :
- Single
- Voltage - Rated DC :
- -60V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±15V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3W Ta 90W Tc
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 23A
- JESD-30 Code :
- R-PSSO-G2
- Drain-source On Resistance-Max :
- 0.12Ohm
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Datasheets
- MTB23P06VT4

P-Channel Tape & Reel (TR) 120m Ω @ 11.5A, 10V ±15V 1620pF @ 25V 50nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MTB23P06VT4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 794 mJ.A device's maximum input capacitance is 1620pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 23A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 81A, which is also its maximum rating peak drainage current.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
MTB23P06VT4 Features
the avalanche energy rating (Eas) is 794 mJ
a continuous drain current (ID) of 23A
based on its rated peak drain current 81A.
a 60V drain to source voltage (Vdss)
MTB23P06VT4 Applications
There are a lot of ON Semiconductor
MTB23P06VT4 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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