MT58L256V18F1T-10

Manufacturer :

Micron Technology

Product Category :

Memory

JESD-30 Code :

R-PQFP-G100

Qualification Status :

COMMERCIAL

Technology :

SRAM - Synchronous

Access Time :

10 ns

Width :

14 mm

Additional Feature :

FLOW-THROUGH ARCHITECTURE

Supply Voltage-Min (Vsup) :

3.135 V

Memory Format :

SRAM

Temperature Grade :

COMMERCIAL

Package / Case :

100-LQFP

Supply Voltage-Max (Vsup) :

3.6 V

Organization :

256KX18

Memory Width :

18

Package :

Bulk

Package Shape :

RECTANGULAR

Number of Words :

262144 words

Supplier Device Package :

100-TQFP (14x20.1)

Memory Density :

4718592 bit

Memory Type :

Volatile

Base Product Number :

MT58L256V18

Reach Compliance Code :

Unknown

Voltage - Supply :

3.135V ~ 3.6V

Number of Functions :

1

Seated Height-Max :

1.6 mm

Parallel/Serial :

Parallel

Operating Temperature :

0°C ~ 70°C (TA)

Length :

20 mm

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Memory Interface :

Parallel

Manufacturer :

Rochester Electronics LLC

Clock Frequency :

66 MHz

Product Status :

Active

Number of Terminals :

100

Write Cycle Time - Word, Page :

-

Memory IC Type :

CACHE SRAM

Terminal Pitch :

0.65 mm

Memory Size :

4Mbit

Memory Organization :

256K x 18

Operating Mode :

SYNCHRONOUS

Surface Mount :

yes

Series :

SYNCBURST™

Pin Count :

100

Terminal Position :

QUAD