MT58L128L32F1F-10
- Mfr.Part #
- MT58L128L32F1F-10
- Manufacturer
- Micron Technology
- Package / Case
- 165-TBGA
- Datasheet
- Download
- Description
- IC SRAM 4MBIT PARALLEL 165FBGA
- Stock
- 1,117
- In Stock :
- 1,117
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Reach Compliance Code :
- Unknown
- Length :
- 15 mm
- Operating Temperature :
- 0°C ~ 70°C (TA)
- Terminal Pitch :
- 1 mm
- Manufacturer :
- Rochester Electronics LLC
- Memory IC Type :
- CACHE SRAM
- RoHS :
- Compliant
- Package / Case :
- 165-TBGA
- Access Time :
- 10 ns
- Package :
- Bulk
- Memory Density :
- 4194304 bit
- Number of Functions :
- 1
- Surface Mount :
- yes
- Parallel/Serial :
- Parallel
- Memory Size :
- 4Mbit
- Voltage - Supply :
- 3.135V ~ 3.6V
- Number of Words :
- 131072 words
- Package Shape :
- RECTANGULAR
- Pin Count :
- 165
- JESD-609 Code :
- e1
- Seated Height-Max :
- 1.2 mm
- Product Status :
- Active
- Supply Voltage-Max (Vsup) :
- 3.6 V
- Write Cycle Time - Word, Page :
- -
- Memory Organization :
- 128K x 32
- Memory Interface :
- Parallel
- Terminal Finish :
- TIN SILVER COPPER
- Base Product Number :
- MT58L128L32
- Number of Terminals :
- 165
- Temperature Grade :
- COMMERCIAL
- Terminal Position :
- BOTTOM
- Clock Frequency :
- 66 MHz
- Additional Feature :
- FLOW-THROUGH ARCHITECTURE
- Technology :
- SRAM - Synchronous
- Series :
- SYNCBURST™
- Width :
- 13 mm
- Supply Voltage-Min (Vsup) :
- 3.135 V
- Organization :
- 128KX32
- Memory Type :
- Volatile
- Qualification Status :
- COMMERCIAL
- Supplier Device Package :
- 165-FBGA (13x15)
- Terminal Form :
- Ball
- Operating Mode :
- SYNCHRONOUS
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PBGA-B165
- Memory Format :
- SRAM
- Datasheets
- MT58L128L32F1F-10

Memory Micron Technology MT58L128L32F1F-10 Overview
Introducing the cutting-edge Memory Micron Technology MT58L128L32F1F-10, a high-performance integrated circuit designed to meet the demands of modern computing systems. This 4MBIT parallel SRAM comes in a compact 165FBGA package, offering unparalleled speed and reliability for your critical applications.
With Micron Technology's reputation for excellence and innovation, combined with the advanced features of the MT58L128L32F1F-10, this memory module stands out as a top choice for businesses seeking reliable and efficient memory solutions.
MT58L128L32F1F-10 Features
- High-speed SRAM: Delivers lightning-fast access times for rapid data retrieval and processing.
- Large Capacity: With 4MBIT of memory, this IC can handle large volumes of data with ease, making it suitable for a wide range of applications.
- Parallel Interface: The parallel interface ensures compatibility with various systems and allows for seamless integration into existing setups.
- Compact Design: The 165FBGA package offers space-saving benefits without compromising performance, ideal for applications where real estate is limited.
- Reliable Performance: Built with Micron Technology's stringent quality standards, the MT58L128L32F1F-10 provides dependable operation in demanding environments.
MT58L128L32F1F-10 Applications
- Networking Equipment: The MT58L128L32F1F-10 is ideal for use in routers, switches, and network appliances, providing high-speed data buffering and caching to optimize network performance.
- Industrial Automation: In industrial automation systems, the MT58L128L32F1F-10 serves as reliable memory storage for storing critical operational data and program instructions.
- Telecommunications: Deployed in telecommunications infrastructure such as base stations and communication servers, the MT58L128L32F1F-10 supports high-speed data processing and caching.
This IC can be seamlessly integrated into networking devices to enhance data processing and ensure smooth and efficient network operations.
Its fast access times and large capacity make it well-suited for real-time control applications, ensuring smooth and reliable operation of machinery and equipment.
Its compact design and robust performance make it an ideal choice for telecom equipment manufacturers seeking dependable memory solutions.
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