MT53E512M64D2NW-046 WT:B

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Mfr.Part #
MT53E512M64D2NW-046 WT:B
Manufacturer
Micron Technology
Package / Case
VFBGA
Datasheet
Download
Description
IC MEMORY DRAM 32G 512MX64 FBGA
Stock
48,155
In Stock :
48,155

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Manufacturer :
Micron Technology
Product Category :
Memory
Clock Frequency :
2.133GHz
Memory Size :
32 Gbit
Packaging :
Tray
Data Bus Width :
64 Bit
Type :
SDRAM - LPDDR4
Product Status :
Active
Mounting Type :
Surface Mount
Mounting Style :
SMD/SMT
Organization :
512 M x 64
Package :
Tray
DRAM Type :
Mobile LPDDR4
Base Product Number :
MT53E512
Package / Case :
VFBGA
Access Time :
468ps
Series :
-
Supplier Device Package :
432-VFBGA (15x15)
Introducing Memory Micron Technology MT53E512M64D2NW-046 WT:B from Chip IC,where excellence meets affordability. This product stands out with its Type:SDRAM - LPDDR4, Mounting Type:Surface Mount, Package / Case:VFBGA, MT53E512M64D2NW-046 WT:B pinout, MT53E512M64D2NW-046 WT:B datasheet PDF, MT53E512M64D2NW-046 WT:B amp .Beyond Memory Micron Technology MT53E512M64D2NW-046 WT:B ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT53E512M64D2NW-046 WT:B


Memory Micron Technology MT53E512M64D2NW-046 WT:B Overview

The Memory Micron Technology MT53E512M64D2NW-046 WT:B is a cutting-edge DRAM IC designed to meet the demanding needs of modern technology applications. Manufactured by Micron Technology, one of the leaders in memory innovation, this component boasts a substantial capacity of 32GB, arranged in a dense 512M x 64 configuration. Its FBGA (Fine-pitch Ball Grid Array) package ensures robust performance in a compact form factor, making it ideal for high-performance computing environments that require both high speed and large volume memory handling. The Memory Micron Technology MT53E512M64D2NW-046 WT:B is optimized for efficiency and reliability, offering an excellent solution for developers looking to push the boundaries of memory-intensive applications.

MT53E512M64D2NW-046 WT:B Features

This DRAM IC features a dynamic 32GB capacity, ideal for processing large datasets and improving application responsiveness. The 512M x 64 configuration provides a balanced approach to speed and density, enhancing both the operational throughput and physical compactness. With its advanced technology, the MT53E512M64D2NW-046 WT:B is engineered to reduce power consumption while maintaining high-speed data transfer rates, making it a superb choice for energy-conscious operations.

MT53E512M64D2NW-046 WT:B Applications

  • Data Centers: Utilizes high capacity memory for managing extensive databases and high traffic loads with improved data retrieval and storage efficiency.
  • Advanced Computing Systems: Supports complex algorithms and processing for AI research and development, providing the necessary speed and capacity for intensive computational tasks.
  • Telecommunications Equipment: Enhances performance in telecom infrastructure, supporting faster processing and reliability for network operations and connectivity.
  • Gaming Consoles: Offers rapid memory access to handle high-resolution graphics and seamless gameplay, improving user experience in cutting-edge gaming systems.
  • Embedded Systems: Ideal for use in embedded applications where space and power efficiency are critical, supporting robust and compact design.
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Shipping Cost

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