MT53D768M64D8NZ-046 WT ES:E TR

Memory Micron Technology MT53D768M64D8NZ-046 WT ES:E TR Overview

The Memory Micron Technology MT53D768M64D8NZ-046 WT ES:E TR is a high-capacity, high-performance integrated circuit designed by Micron Technology, specializing in DRAM solutions. This IC DRAM features a massive 48Gbit density and operates at a speed of 2133 MHz, encapsulated in a compact 376-ball WFBGA package. This product caters to advanced computing systems requiring extensive data buffering and storage capabilities, such as server farms, data centers, and high-performance computing applications. The robust build and enhanced data rate make the Memory Micron Technology MT53D768M64D8NZ-046 WT ES:E TR a cornerstone for developers looking to maximize memory bandwidth and system reliability in demanding operational environments.

MT53D768M64D8NZ-046 WT ES:E TR Features

This DRAM module is engineered to support high-speed data transfer rates of 2133 MHz, providing substantial throughput for data-intensive applications. Its 48Gbit capacity enables significant storage potential for large-scale operations, while the 376WFBGA packaging ensures a reduced footprint on system boards, facilitating more efficient space management in multi-chip configurations.

MT53D768M64D8NZ-046 WT ES:E TR Applications

• Data Centers: Utilizes its high storage capacity and speed to manage large databases and handle vast amounts of data transactions seamlessly.
• High-Performance Computing (HPC): Employs its rapid processing capabilities to execute complex computations and support scientific research, financial modeling, and engineering simulations.
• Server Farms: Ideal for server applications where high density and fast access to large volumes of data are crucial for efficient server performance and reliability.
• Telecommunications Infrastructure: Supports the high-speed processing needs of telecommunications systems, ensuring robust and reliable performance for managing network operations.