MT53B384M32D2NP-053 WT:B TR

Memory Micron Technology MT53B384M32D2NP-053 WT:B TR Overview

The Memory Micron Technology MT53B384M32D2NP-053 WT:B TR is a high-capacity, high-performance integrated circuit from Micron Technology, designed to meet the demanding needs of modern computing and digital storage applications. This 12Gbit DRAM module offers exceptional speed with a data rate of 1866 MHz and is packaged in a compact 200-ball WFBGA (fine-pitch ball grid array) format. Tailored for efficiency and high-density requirements, this product stands out in the market for its robustness and reliability, making it an ideal choice for enterprises looking to enhance their system performance and memory scalability.

MT53B384M32D2NP-053 WT:B TR Features

The MT53B384M32D2NP-053 WT:B TR IC DRAM is equipped with several notable features. It operates at a high data rate of 1866 MHz, which ensures rapid access and processing of information, crucial for high-speed computing environments. The 12Gbit density allows for substantial data storage and management in a very compact form factor, facilitating the design of smaller yet powerful devices. Additionally, the use of a 200-ball WFBGA package enhances the thermal characteristics of the module and provides greater durability and reliability in varied operational conditions.

MT53B384M32D2NP-053 WT:B TR Applications

• Advanced Computing Systems: This DRAM module is crucial for servers and workstations requiring high memory capacities and speeds to handle complex computations and multiple applications simultaneously.
• Mobile Devices: Suitable for integration in smartphones and tablets where space is limited but demand for high performance and energy efficiency is high.
• Consumer Electronics: Ideal for use in gaming consoles and high-definition televisions that require quick data processing for a smooth and responsive user experience.
• Automotive Systems: Enhances functionality in advanced driver-assistance systems (ADAS) and infotainment systems by providing the necessary speed and storage capacity to process real-time data.