MT47H64M16HR-25E IT:G

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Width :

16

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Terminal Pitch :

0.8mm

Number of Terminations :

84

Memory Format :

DRAM

Supply Voltage-Min (Vsup) :

1.7V

Width :

8mm

Output Characteristics :

3-STATE

Pin Count :

84

Supply Voltage :

1.8V

Standby Current-Max :

0.007A

Sequential Burst Length :

48

Time@Peak Reflow Temperature-Max (s) :

30

Supply Current-Max :

0.44mA

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

1.9V

Organization :

64MX16

Power Supplies :

1.8V

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

15ns

Peak Reflow Temperature (Cel) :

260

Clock Frequency :

400MHz

Operating Temperature :

-40°C~95°C TC

Package / Case :

84-TFBGA

Interleaved Burst Length :

48

Surface Mount :

yes

Qualification Status :

Not Qualified

Memory Size :

1Gb 64M x 16

Additional Feature :

AUTO/SELF REFRESH

Length :

12.5mm

I/O Type :

COMMON

Access Time :

400ps

Mounting Type :

Surface Mount

JESD-30 Code :

R-PBGA-B84

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Height Seated (Max) :

1.2mm

Base Part Number :

MT47H64M16

Reach Compliance Code :

Unknown

Published :

2010

Number of Ports :

1

Operating Mode :

SYNCHRONOUS

Voltage - Supply :

1.7V~1.9V

Number of Functions :

1

HTS Code :

8542.32.00.32

Memory Density :

1073741824 bit

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Refresh Cycles :

8192

Memory Type :

Volatile

Packaging :

Tray