MT47H32M16NF-25E IT:H
- Mfr.Part #
- MT47H32M16NF-25E IT:H
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 4,900
- In Stock :
- 4,900
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Surface Mount :
- yes
- Number of Ports :
- 1
- ECCN Code :
- EAR99
- Memory Interface :
- Parallel
- Output Characteristics :
- 3-STATE
- Operating Mode :
- SYNCHRONOUS
- Memory Width :
- 16
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Standby Current-Max :
- 0.01A
- Interleaved Burst Length :
- 48
- Voltage - Supply :
- 1.7V~1.9V
- Factory Lead Time :
- 9 Weeks
- Supply Voltage :
- 1.8V
- Additional Feature :
- AUTO/SELF REFRESH
- HTS Code :
- 8542.32.00.28
- Sequential Burst Length :
- 48
- Write Cycle Time - Word, Page :
- 15ns
- Memory Size :
- 512Mb 32M x 16
- Access Time :
- 400ps
- Package / Case :
- 84-TFBGA
- Length :
- 12.5mm
- I/O Type :
- COMMON
- Clock Frequency :
- 400MHz
- JESD-30 Code :
- R-PBGA-B84
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Pin Count :
- 84
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Supply Voltage-Min (Vsup) :
- 1.7V
- JESD-609 Code :
- e1
- Base Part Number :
- MT47H32M16
- Supply Current-Max :
- 0.215mA
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -40°C~95°C TC
- Memory Density :
- 536870912 bit
- Height Seated (Max) :
- 1.2mm
- Number of Functions :
- 1
- Refresh Cycles :
- 8192
- Mounting Type :
- Surface Mount
- Terminal Pitch :
- 0.8mm
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Width :
- 8mm
- Supply Voltage-Max (Vsup) :
- 1.9V
- Organization :
- 32MX16
- Number of Terminations :
- 84
- Packaging :
- Tray
- Memory Type :
- Volatile
- Power Supplies :
- 1.8V
- Memory Format :
- DRAM
- Published :
- 2014
- Datasheets
- MT47H32M16NF-25E IT:H

Memory Micron Technology MT47H32M16NF-25E IT:H Overview
The Memory Micron Technology MT47H32M16NF-25E IT:H is a high-performance DRAM IC that serves the advanced needs of modern technology systems. With a density of 512Mbit and packaged in a compact 84FBGA, this integrated circuit by Micron Technology guarantees robust performance and reliability for applications requiring high-speed data processing and significant storage capacity. The use of leading-edge technology in manufacturing ensures that this memory component meets the rigorous standards of both quality and efficiency, making it ideal for bulk purchases by businesses aiming to enhance their technology infrastructure.
MT47H32M16NF-25E IT:H Features
This DRAM IC features a parallel interface, offering high-speed data transfer rates which are essential for performance-critical applications. The compact 84FBGA package is designed for efficient space utilization in dense circuit designs, making it highly suitable for sophisticated electronic assemblies. Additionally, the part is tailored to operate efficiently under a broad range of industrial temperatures, thus ensuring reliability and stability in diverse operating environments.
MT47H32M16NF-25E IT:H Applications
- Consumer Electronics: Utilized in devices such as high-definition televisions and gaming consoles where large amounts of temporary data storage are required for smooth and fast processing.
- Communication Equipment: Essential in routers and switches for buffer management and data flow control, enhancing the performance and reliability of network communications.
- Automotive Systems: Deployed in automotive infotainment systems to manage real-time data streaming and processing, improving the user experience and system responsiveness.
- Industrial Automation: Helps in managing operational data in real-time for machinery control systems, ensuring seamless and efficient industrial operations.
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