MT47H128M4CF-25E:G
- Mfr.Part #
- MT47H128M4CF-25E:G
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 32,003
- In Stock :
- 32,003
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Max Frequency :
- 800MHz
- Data Bus Width :
- 4B
- Additional Feature :
- AUTO/SELF REFRESH
- ECCN Code :
- EAR99
- Refresh Cycles :
- 8192
- Time@Peak Reflow Temperature-Max (s) :
- 30
- HTS Code :
- 8542.32.00.28
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 60
- Memory Interface :
- Parallel
- Number of Functions :
- 1
- JESD-609 Code :
- e1
- Mount :
- Surface Mount
- Terminal Position :
- BOTTOM
- Package / Case :
- 60-TFBGA
- Output Characteristics :
- 3-STATE
- Memory Size :
- 512Mb 128M x 4
- Packaging :
- Tray
- Voltage - Supply :
- 1.7V~1.9V
- Terminal Pitch :
- 0.8mm
- Memory Width :
- 4
- Base Part Number :
- MT47H128M4
- Published :
- 2010
- Supply Voltage-Max (Vsup) :
- 1.9V
- Clock Frequency :
- 400MHz
- Pbfree Code :
- yes
- Memory Format :
- DRAM
- Operating Supply Voltage :
- 1.8V
- Standby Current-Max :
- 0.007A
- Access Time :
- 400ps
- Number of Terminations :
- 60
- RoHS Status :
- ROHS3 Compliant
- Interleaved Burst Length :
- 48
- Height Seated (Max) :
- 1.2mm
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Address Bus Width :
- 16b
- Supply Voltage :
- 1.8V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Sequential Burst Length :
- 48
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 0°C~85°C TC
- Organization :
- 128MX4
- Nominal Supply Current :
- 125mA
- I/O Type :
- COMMON
- Length :
- 10mm
- Supply Voltage-Min (Vsup) :
- 1.7V
- Density :
- 512 Mb
- Lead Free :
- Lead Free
- Number of Ports :
- 1
- Pin Count :
- 60
- Memory Type :
- Volatile
- Write Cycle Time - Word, Page :
- 15ns
- Datasheets
- MT47H128M4CF-25E:G

Memory Micron Technology MT47H128M4CF-25E:G Overview
The Memory Micron Technology MT47H128M4CF-25E:G represents a high-performance IC DRAM solution, offering a substantial 512 Mbit storage capacity designed for applications requiring high-speed data retrieval and substantial bandwidth. Manufactured by Micron Technology, a leader in integrated memory technologies, this product ensures reliability and durability with its advanced 60FBGA packaging. It's engineered to support a wide range of industrial and commercial applications, making it an excellent choice for businesses looking to optimize their electronic systems with top-tier memory components.
MT47H128M4CF-25E:G Features
This DRAM IC features a parallel interface, ensuring high-speed data transfer and reduced latency. The 60FBGA package not only provides a compact footprint but also enhances the thermal characteristics and electrical performance of the device. With a configuration of 128M x 4 bits, this memory chip is optimized for high-density mounting and is capable of supporting the demanding memory needs of contemporary applications.
MT47H128M4CF-25E:G Applications
- Embedded Systems: Utilized in sophisticated control systems, the MT47H128M4CF-25E:G offers the necessary speed and capacity for managing real-time operations and multitasking environments.
- Automotive Electronics: Ideal for advanced driver-assistance systems (ADAS), this DRAM can handle high data throughput requirements, improving both performance and reliability in automotive applications.
- Mobile Devices: Supports the high memory requirements of smartphones and tablets, providing the bandwidth needed for multimedia applications and multitasking.
- Networking Hardware: Applied in routers and switches, this memory component ensures efficient data buffering and high-speed packet processing, essential for maintaining network performance.
- Consumer Electronics: Used in devices like smart TVs and gaming consoles, where high memory bandwidth and capacity are crucial for user experience enhancement.
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