MT40A512M8RH-083E AAT:B

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Format :

DRAM

Number of Ports :

1

Operating Mode :

SYNCHRONOUS

Supply Voltage-Min (Vsup) :

1.14V

Packaging :

Tray

JESD-609 Code :

e1

Number of Terminations :

78

Number of Functions :

1

Height Seated (Max) :

1.2mm

Package / Case :

78-TFBGA

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Access Mode :

MULTI BANK PAGE BURST

Mounting Type :

Surface Mount

Organization :

512MX8

Memory Width :

8

Screening Level :

AEC-Q100

Supply Voltage :

1.2V

Peak Reflow Temperature (Cel) :

260

Voltage - Supply :

1.14V~1.26V

Memory Type :

Volatile

Memory Size :

4Gb 512M x 8

Clock Frequency :

1.2GHz

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage-Max (Vsup) :

1.26V

Memory Density :

4294967296 bit

Width :

9mm

Operating Temperature :

-40°C~105°C TC

JESD-30 Code :

R-PBGA-B78

Memory Interface :

Parallel

Terminal Pitch :

0.8mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

BOTTOM

Length :

10.5mm