MT40A256M16GE-083E:B

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Mfr.Part #
MT40A256M16GE-083E:B
Manufacturer
Micron Technology
Package / Case
96-TFBGA
Datasheet
Download
Description
IC DRAM 4GBIT PARALLEL 96FBGA
Stock
26,647
In Stock :
26,647

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Manufacturer :
Micron Technology
Product Category :
Memory
Number of Terminations :
96
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Contact Plating :
Copper, Silver, Tin
Mounting Type :
Surface Mount
Mount :
Surface Mount
Additional Feature :
AUTO/SELF REFRESH
Supply Voltage-Max (Vsup) :
1.26V
Memory Width :
16
Height :
1.2mm
Supply Voltage-Min (Vsup) :
1.14V
Operating Temperature :
0°C~95°C TC
Terminal Position :
BOTTOM
Clock Frequency :
1.2GHz
Memory Size :
4Gb 256M x 16
Memory Interface :
Parallel
Memory Type :
Volatile
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Density :
4 GB
Operating Mode :
SYNCHRONOUS
Number of Pins :
96
Number of Ports :
1
RoHS Status :
ROHS3 Compliant
Data Bus Width :
16b
Access Time :
833 ps
Number of Functions :
1
Published :
2016
Packaging :
Tray
Voltage - Supply :
1.14V~1.26V
Address Bus Width :
15b
Operating Supply Voltage :
1.2V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Supply Voltage :
1.2V
Length :
14mm
Organization :
256MX16
Memory Format :
DRAM
Factory Lead Time :
4 Weeks
Package / Case :
96-TFBGA
Terminal Pitch :
0.8mm
Introducing Memory Micron Technology MT40A256M16GE-083E:B from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:96, Mounting Type:Surface Mount, Operating Temperature:0°C~95°C TC, Number of Pins:96, Package / Case:96-TFBGA, MT40A256M16GE-083E:B pinout, MT40A256M16GE-083E:B datasheet PDF, MT40A256M16GE-083E:B amp .Beyond Memory Micron Technology MT40A256M16GE-083E:B ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT40A256M16GE-083E:B


Memory Micron Technology MT40A256M16GE-083E:B Overview

The Memory Micron Technology MT40A256M16GE-083E:B is a cutting-edge 4Gbit DRAM IC designed for high-speed, high-density memory requirements. Manufactured by Micron Technology, a leader in memory and storage solutions, this component features a parallel interface encapsulated in a compact 96-ball FBGA package. This DRAM IC is optimized for applications requiring extensive data buffering and storage capacity, offering robust reliability and performance for complex digital systems. It stands out for its efficient power management and high-speed data processing capabilities, making it an ideal choice for manufacturers seeking to enhance the computational abilities of their high-performance computing systems.

MT40A256M16GE-083E:B Features

  • Capacity: 4Gbit
  • Package Type: 96-ball FBGA
  • Interface: Parallel
  • High-speed operation and data transfer
  • Low power consumption
  • Designed for high-density applications

MT40A256M16GE-083E:B Applications

  • Smartphones and Tablets: Provides the high memory capacity and speed required for multitasking and media processing in modern mobile devices.
  • Servers: Enhances server memory banks to manage large-scale processes and multiple simultaneous tasks efficiently.
  • Automotive Systems: Used in advanced driver-assistance systems (ADAS) to process and store large amounts of real-time data.
  • Consumer Electronics: Ideal for use in gaming consoles and high-definition televisions, where high memory bandwidth and capacity are critical for optimal performance.
  • Networking Equipment: Supports high-speed network backbones for data centers and telecommunications equipment.
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Shipping Cost

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