MT40A1G8WE-083E AAT:B
- Mfr.Part #
- MT40A1G8WE-083E AAT:B
- Manufacturer
- Micron Technology
- Package / Case
- 78-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 8GBIT PARALLEL 78FBGA
- Stock
- 19,520
- In Stock :
- 19,520
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Size :
- 8Gb 1G x 8
- Terminal Pitch :
- 0.8mm
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Packaging :
- Tray
- Organization :
- 1GX8
- Operating Mode :
- SYNCHRONOUS
- Package / Case :
- 78-TFBGA
- Number of Ports :
- 1
- Memory Format :
- DRAM
- Height Seated (Max) :
- 1.2mm
- Memory Density :
- 8589934592 bit
- Voltage - Supply :
- 1.14V~1.26V
- Length :
- 12mm
- Width :
- 8mm
- JESD-30 Code :
- R-PBGA-B78
- Operating Temperature :
- -40°C~105°C TC
- Number of Terminations :
- 78
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Mounting Type :
- Surface Mount
- Access Mode :
- MULTI BANK PAGE BURST
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Screening Level :
- AEC-Q100
- Memory Width :
- 8
- Supply Voltage-Max (Vsup) :
- 1.26V
- Memory Type :
- Volatile
- Number of Functions :
- 1
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup) :
- 1.14V
- RoHS Status :
- RoHS Compliant
- Clock Frequency :
- 1.2GHz
- Reach Compliance Code :
- Compliant
- Supply Voltage :
- 1.2V
- Memory Interface :
- Parallel
- Datasheets
- MT40A1G8WE-083E AAT:B

Memory Micron Technology MT40A1G8WE-083E AAT:B Overview
The Memory Micron Technology MT40A1G8WE-083E AAT:B is an integrated circuit specifically designed for high-capacity storage solutions, encapsulating 8 Gb of DRAM in a compact 78FBGA package. Manufactured by Micron Technology, a leader in memory and storage solutions, this IC offers an ideal blend of density, speed, and power efficiency, making it an excellent choice for advanced computing systems. Its robust design is tailored for high-performance applications requiring substantial memory bandwidth and low latency. The product is engineered to sustain rigorous workloads and deliver consistent performance, thereby supporting businesses in achieving enhanced operational efficiencies and reduced system bottlenecks.
MT40A1G8WE-083E AAT:B Features
This DRAM module is designed with several key features that make it stand out in the memory sector. It utilizes parallel architecture to enhance data transfer speeds and reduce latency. The compact 78FBGA package is optimized for space-constrained environments, ensuring that the module integrates seamlessly into various hardware configurations. Its energy efficiency also aids in minimizing thermal output, which is crucial for maintaining system stability and longevity.
MT40A1G8WE-083E AAT:B Applications
- Enterprise Servers and Data Centers: The high capacity and fast data transfer rates make this DRAM ideal for server applications and data centers where large volumes of data are processed and stored, facilitating efficient data handling and improved server responsiveness.
- High-Performance Computing (HPC): Utilized in systems requiring intense computational power, this memory module supports complex simulations, scientific calculations, and data analysis by providing the necessary speed and bandwidth to handle extensive computational tasks.
- Networking Equipment: In routers and switches, this DRAM module enhances the capability to manage growing traffic volumes and complex network operations, ensuring smooth data flow and improved network reliability.
- Gaming Consoles: Enhances gaming experiences by supporting quick loading times and complex in-game physics, which are essential for modern gaming consoles that demand high-speed memory for seamless gameplay.
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